Topic 4. Nanoscale Modeling & Simulation
Session Chair:
- Dr. Zhou Xing, Nanyang Technological University (Singapore)
Nanoscale Modeling & Simulation session encompasses physical, analytical, and numerical models of nanoscale devices at the atomic, microscopic, or macroscopic levels of abstraction. Topics include, but not limited to, the following: non-equilibrium Green's function formalism; semi-classical transport; Monte Carlo; pseudopotential band calculations; ballistic transport; molecular dynamics, quantum and statistical mechanical transport; non-stationary transport; scattering models; energy-balance and drift-diffusion numerical simulations; electrical-thermal modeling; compact modeling; behavior modeling. Application areas include, but not limited to, the following: metal-insulator-semiconductor interfaces, tunneling in nanoscale devices, single-electron devices, carbon-nanotube FETs, silicon-nanowires, double-gate/tri-gate FinFETs, nanoscale CMOS devices.
